High-Quality Tungsten Films by Hotwire-Assisted CVD/ALD at Low Temperature
نویسنده
چکیده
There is a growing interest in atomic layer deposition (ALD) of metals for ultra-large-scale integrated circuit (ULSIC) manufacturing. Radical-enhanced ALD (REALD) utilizing plasma (PEALD) has been proposed to grow a number of metals [1]. In our work, we investigate an alternative approach to REALD without plasma, i.e. replacing plasma by a hot (up to 2000 oC) tungsten (W) wire. In this so-called hot-wire ALD (HWALD) approach, tungsten is deposited by using alternating pulses of WF6 gas and atomic hydrogen (at-H). The latter is generated by catalytic dissociation of molecular hydrogen (H2) upon the hot wire. Apart from HWALD, W films have additionally been deposited by hot-wire chemical vapor deposition (HWCVD), for a comparison of their properties.
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